S3AB - S3MB
Taiwan Semiconductor
2 Version:L1705
Junction-to-lead thermal resistance
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
Forward voltage per diode
(1)
Reverse current @ rated V
R
per diode
(2)
I
F
=0.5A , I
R
=1.0A
I
RR
=0.25A
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
Note:
1. "x" defines voltage from 50V (S3AB) to 1000V (S3MB)
*: Optional available
AEC-Q101 qualified
Green compound
